Influence of technological parameters on the behavior of the hole effective mass in SiGe structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1304839
Reference24 articles.
1. SiGe heterostructures for FET applications
2. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
3. Photoluminescence of Si/SiGe/Si quantum wells on separation by oxygen implantation substrate
4. Hole confinement in a Si/GeSi/Si quantum well on SIMOX
5. Study of quasi-two dimensional hole gas in Si/SixGe1−x/Si quantum wells
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2. Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures;Nanotechnology;2010-08-19
3. Effect of surface carrier concentration on valence subbands in Si(111)p-type inversion layers: Angle-resolved photoemission spectroscopy;Physical Review B;2010-07-29
4. Exciton–photon interaction in a quantum dot embedded in a photonic microcavity;Journal of Physics B: Atomic, Molecular and Optical Physics;2009-04-06
5. The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor;Applied Surface Science;2008-11
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