InP double heterojunction bipolar transistors for terahertz computed tomography-Reference-Cited by-同舟云学术

InP double heterojunction bipolar transistors for terahertz computed tomography

Published:2018-08 Issue:8 Volume:8 Page:085320
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Coquillat Dominique¹,Duhant Alexandre²³,Triki Meriam²,Nodjiadjim Virginie⁴,Konczykowska Agnieszka⁴,Riet Muriel⁴,Dyakonova Nina¹,Strauss Olivier³,Knap Wojciech¹

Affiliation:

1. Laboratoire Charles Coulomb (L2C), University of Montpellier, CNRS, Montpellier, France

2. Department of Research and Development, T-Waves Technologies, Montpellier, France

3. Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier (LIRMM), University of Montpellier, CNRS, Montpellier, France

4. III-V Lab, Campus de Polytechnique, 1 Avenue Augustin Fresnel, Palaiseau, France

Funder

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5039331

Reference23 articles.

1. Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias

2. Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

3. A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology

4. Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection

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