Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332516
Reference8 articles.
1. Growth and characterization of heteroepitaxial zinc selenide
2. Deep level defects in heteroepitaxial zinc selenide
3. Photoelectronic Properties of ZnSe Crystals
4. Investigations of Mn‐doped ZnSe by photocapacitance and photocurrent techniques
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1. Optical properties and electrical properties of heavily Al-doped ZnSe layers;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-03
2. Electrical properties of conductive and resistive ZnSe layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
3. Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy;Materials Science in Semiconductor Processing;2003-10
4. Photoacoustic spectra of Sb-doped ZnSe;Materials Letters;2001-09
5. Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy;Journal of Crystal Growth;2000-12
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