Author:
Colleoni Davide,Pourtois Geoffrey,Pasquarello Alfredo
Funder
Swiss National Science Fondation
Subject
Physics and Astronomy (miscellaneous)
Reference56 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. D. Lin ,
A. Alian ,
S. Gupta ,
B. Yang ,
E. Bury ,
S. Sioncke ,
R. Degraeve ,
M. L. Toledano ,
R. Krom ,
P. Favia ,
H. Bender ,
M. Caymax ,
K. C. Saraswat ,
N. Collaert , and
A. Thean , in IEEE International Electron Devices Meeting (IEDM) (2012), p. 28.3.1.
3. Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
4. A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
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