Hybrid functional study of native point defects and impurities in ZnGeN2
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560, USA
2. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Funder
National Science Foundation
U.S. Department of Energy
DOD | United States Army | RDECOM | Army Research Office
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4999790
Reference32 articles.
1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2. AlGaN/GaN HEMTs-an overview of device operation and applications
3. Study of intersubband transitions in GaN-ZnGeN2 coupled quantum wells
4. Synthesis, structure, and optoelectronic properties of II–IV–V2materials
5. ZnGeN2 and ZnGeN2:Mn2+ phosphors: hydrothermal-ammonolysis synthesis, structure and luminescence properties
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