Nanosecond microscopy of capacitance at SiO2/4H-SiC interfaces by time-resolved scanning nonlinear dielectric microscopy
Author:
Affiliation:
1. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
Funder
Cabinet Office, Government of Japan
MEXT | Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
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