Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4750481
Reference21 articles.
1. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
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3. GaN: Processing, defects, and devices
4. Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes
5. Detection of chloride ions using an integrated Ag∕AgCl electrode with AlGaN∕GaN high electron mobility transistors
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