High temperature efficient, stable Si wafer-based selective solar absorbers-Reference-Cited by-同舟云学术

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High temperature efficient, stable Si wafer-based selective solar absorbers

Published:2017-04-03 Issue:14 Volume:110 Page:141101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tian Hao¹^ORCID,Zhou Zhiguang¹,Liu Tianran¹,Karina Cindy²,Guler Urcan¹^ORCID,Shalaev Vladimir¹,Bermel Peter¹^ORCID

Affiliation:

1. Birck Nanotechnology Center, Electrical and Computer Engineering, 1205 W. State St, Purdue University, West Lafayette, Indiana 47907, USA

2. ETH (Swiss Federal Institute of Technology) Zurich, Technopark, ETH-Building, Technoparkstr. 1, CH-8005 Zurich, Switzerland

Funder

National Science Foundation (NSF)

Semiconductor Research Corporation (SRC)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979510

Reference34 articles.

1. SELECTIVE SOLAR ABSORBERS

2. High-performance flat-panel solar thermoelectric generators with high thermal concentration

3. Absorber and emitter for solar thermo-photovoltaic systems to achieve efficiency exceeding the Shockley-Queisser limit

4. Ni-Al2O3 selective cermet coatings for photothermal conversion up to 500°C

5. Chemical vapor deposition of thin semiconductor films for solar energy conversion

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