Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871711
Reference27 articles.
1. New Magnetic Anisotropy
2. Exchange Anisotropy—A Review
3. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
4. Nanoring magnetic tunnel junction and its application in magnetic random access memory demo devices with spin-polarized current switching (invited)
5. Magnetoresistive sensors
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1. Current-pulse-induced nonvolatile magnetization reversal of NiFe/NiO exchange-bias bilayers under zero magnetic field;Journal of Alloys and Compounds;2024-02
2. Significant role of thermal effects in current-induced exchange bias field switching at antiferromagnet/ferromagnet interface;Acta Physica Sinica;2024
3. Exchange bias model including setting process: Investigation of antiferromagnetic alignment fraction due to thermal activation;Journal of Applied Physics;2023-01-10
4. Manipulating exchange bias in Co/IrMn films by surface acoustic wave;Journal of Physics D: Applied Physics;2022-12-08
5. Enhancement of writing efficiency for multilevel memory in perpendicularly magnetized Pt/Co/Pt/IrMn multilayers;Journal of Magnetism and Magnetic Materials;2022-12
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