Oxygen incorporation and oxygen‐induced defect formation in thin Si and Si1−xGexlayers on silicon grown by chemical vapor deposition at atmospheric pressure-Reference-Cited by-同舟云学术

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Oxygen incorporation and oxygen‐induced defect formation in thin Si and Si1−xGexlayers on silicon grown by chemical vapor deposition at atmospheric pressure

Published:1994-06-15 Issue:12 Volume:75 Page:7829-7834
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Krüger D.,Morgenstern Th.,Kurps R.,Bugiel E.,Quick Ch.,Kühne H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.356565

Reference14 articles.

1. Physics and applications of GexSi1-x/Si strained-layer heterostructures

2. Ultrathin SimGenstrained layer superlattices-a step towards Si optoelectronics

3. Low‐temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure

4. In situ doping of Si and Si1−xGex in ultrahigh vacuum chemical vapor deposition

5. Conditions for an Oxide‐Free Si Surface for Low‐Temperature Processing: Steady‐State Boundary

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Secondary ion mass spectroscopy ultrashallow depth profiling for Si/Si1−xGex/Si heterojunction bipolar transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01

2. Composition Dependence of Hardness and Moduli in GeSi/Si-Heterostructures Measured by Nanoindentation;MRS Proceedings;1994

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