Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference25 articles.
1. GaN as Seen by the Industry
2. Growth of fcc Fe films on diamond
3. Schottky barrier photodetector based on Mg‐dopedp‐type GaN films
4. High-quality visible-blind AlGaN p-i-n photodiodes
5. Ion‐implanted GaN junction field effect transistor
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