In situmonitoring of electron cyclotron resonance plasma processing of GaAs surfaces by optical reflection spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111484
Reference12 articles.
1. Electron cyclotron resonance microwave discharges for etching and thin‐film deposition
2. Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption Method
3. Ion beam etching of GaAs and GaAs/AlGaAs heterostructures probed in real time by spectroscopic ellipsometry
4. Disorder effects and the optical properties of amorphous GaAs and GaP
5. Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eV
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1. In situ cleaning of GaAs and AlxGa1−xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
2. Attempts to correlate hydrogen plasma-induced and Si3N4/GaAs interface-related surface states: a charge deep-level transient spectroscopy study;Applied Surface Science;1997-01
3. Reflection;Optical Diagnostics for Thin Film Processing;1996
4. A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films usinginsitunormal incidence reflectance;Journal of Applied Physics;1995-12
5. Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11
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