Engineering the hole confinement for CdTe-based quantum dot molecules-Reference-Cited by-同舟云学术

Engineering the hole confinement for CdTe-based quantum dot molecules

Published:2015-06-14 Issue:22 Volume:117 Page:224306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kłopotowski Ł.¹,Wojnar P.¹,Kret S.¹^ORCID,Parlińska-Wojtan M.²,Fronc K.¹,Wojtowicz T.¹,Karczewski G.¹^ORCID

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

2. Facility for Electron Microscopy and Sample Preparation, Center for Microelectronics and Nanotechnology, Faculty of Mathematics and Natural Sciences, University of Rzeszów, ul. Pigonia 1, 35-959 Rzeszów, Poland

Funder

Narodowe Centrum Nauki (National Science Centre)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922044

Reference53 articles.

1. Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

2. Coupled Quantum Dots Fabricated by Cleaved Edge Overgrowth: From Artificial Atoms to Molecules

3. Coupled quantum dots as quantum exclusive-OR gate

4. Spin interactions and switching in vertically tunnel-coupled quantum dots

5. Coupling and Entangling of Quantum States in Quantum Dot Molecules

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