Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344358
Reference21 articles.
1. Calculated stresses in multilayered heteroepitaxial structures
2. Strain‐enhanced luminescence degradation in GaAs/GaAlAs double‐heterostructure lasers revealed by photoluminescence
3. Strain‐related degradation phenomena in long‐lived GaAlAs stripe lasers
4. Elastic Stresses in InGaAsP Heterostructures with Alloyed Contact Metallizations
5. Stresses in the InP/Ti/Pt and InP/SiO2/Ti/Pt multilayer systems
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1. Extraction of bonding strain data in diode lasers from polarization-resolved photoluminescence measurements;Microelectronics Reliability;2004-05
2. Photoelastic effect from die bonding of diode lasers;Applied Optics;2004-01-01
3. Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescence;IEEE Journal of Quantum Electronics;1993
4. Lattice dilation acrossn-InP-substrates and its influence on material properties of InP/InGaAsP- double-heterostructures;Journal of Electronic Materials;1991-12
5. Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes;IEEE Journal of Quantum Electronics;1991-04
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