Resistive switching behavior of the memristor based on WS2 nanosheets and polyvinylpyrrolidone nanocomposites

Author:

Cao Qing1ORCID,Xiong Limiao1ORCID,Yuan Xudong2,Li Pengcheng3,Wu Jun1,Bi Hailin1,Zhang Jun1ORCID

Affiliation:

1. School of Mechanical Engineering, Hefei University of Technology, Hefei 230009, China

2. State Key Laboratory of Compressor Technology, Hefei General Machinery Research Institute Co., Ltd., Hefei, Anhui 230031, China

3. School of Automotive and Transportation Engineering, Hefei University of Technology, Hefei 230009, China

Abstract

Ag/tungsten disulfide (WS2)–polyvinylpyrrolidone (PVP)/Cu memristors based on monolayer WS2 nanosheets and polyvinylpyrrolidone (PVP) nanocomposites were fabricated, and the influence of PVP content on the switching behaviors was investigated. The results indicate that the WS2–PVP based memristors show write-once read-many times (WORM) memory behavior. Remarkable resistive switching results such as a low operating voltage (VSET < 1 V), a high switching ratio (>103), good endurance (>100 cycles), and data retention time (>200 s) are obtained. With the increase in the PVP content, the device VSET gradually increases, and the switching ratio first slightly increases and then remarkably decreases. The double logarithm I–V curves verify that the switching mechanism of the devices is the trap-controlled space charge limited current mechanism, which is explained with the energy band diagram.

Funder

National Natural Science Foundation of China

Open Foundation of State Key Laboratory of Compressor Technology

Anhui Provincial Natural Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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