Donor‐acceptor pairs in GaP and GaAs involving the deep nickel acceptor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92375
Reference15 articles.
1. Nickel, a persistent inadvertent contaminant in device-grade vapour epitaxially grown gallium phosphide
2. Optical and EPR study of the nickel two-electron-trap state in GaP
3. Deep‐level transient spectroscopy studies of Ni‐ and Zn‐diffused vapor‐phase‐epitaxyn‐GaAs
4. Effects of contact metals on minority carrier diffusion lengths in GaAs
5. Deep level profiles at substrate-epitaxial interfaces in gallium phosphide
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3. Ohmic contacts to GaAs epitaxial layers;Critical Reviews in Solid State and Materials Sciences;1997-09
4. Piezo-Spectroscopic Study of the V3+ Photoluminescence in GaP:V:S;Materials Science Forum;1995-11
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