Titanium disilicide formation by interdiffusion of titanium/amorphous silicon multilayers: Influence of the bilayer silicon to titanium thickness ratio on the film properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352122
Reference21 articles.
1. The formation of shallow low-resistance source—Drain regions for VLSI CMOS technologies
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1. Effects of the Process Variable on Sputtered TiSi[sub x] Polycide Gate Electrodes for sub-0.15 μm Memory Device Application;Journal of The Electrochemical Society;2001
2. The Effects of Implanted Arsenic on Ti-Silicide Formation;Solid State Phenomena;1999-10
3. High crystalline quality titanium disilicides formed by sputter deposition of Ti⧹Si multilayers and annealing;Vacuum;1998-11
4. Low Specific Contact Resistivity Titanium Silicides on n+ and p+ Silicon by Sputter Deposition of Ti/Si Multilayers and Annealing;Journal of The Electrochemical Society;1997-11-01
5. Erbium silicide films on (100) silicon, grown in high vacuum. Fabrication and properties;Thin Solid Films;1996-04
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