Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics-Reference-Cited by-同舟云学术

Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics

Published:2013-06-07 Issue:21 Volume:113 Page:214506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cho Edward Namkyu,Shin Yong Hyeon,Yun Ilgu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4808452

Reference19 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. CMOS design near the limit of scaling

3. Techniques for reducing the reverse short channel effect in sub-0.5 μm CMOS

4. Control of Threshold-Voltage and Short-Channel Effects in Ultrathin Strained-SOI CMOS Devices

5. Scaling theory for double-gate SOI MOSFET's

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