Low temperature photoluminescence ofn‐type GaInAsP layers grown on InP by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332714
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1. Heterojunction lasers made of GaxIn1–xAsyP1–yand AlxGa1–xSbyAS1–ysolid solutions
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