Chemistry of Cu deposition by Cu(hfac)(tmvs) monitored by Li+ ion attachment mass spectrometry-Reference-Cited by-同舟云学术

Chemistry of Cu deposition by Cu(hfac)(tmvs) monitored by Li+ ion attachment mass spectrometry

Published:2006-10-15 Issue:8 Volume:100 Page:084912
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fujii Toshihiro,Arulmozhiraja Sundaram,Nakamura Megumi,Shiokawa Yoshiro

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2360768

Reference22 articles.

1. L. Jian, H. Stella, S. Russell, and J. W. Mayer, in Crucial Issues in Semiconductor Materials and Processing Technologies edited by S. Coffa, F. Priolo, E. Rimini, and J. M. Poate NATO Advanced Studies Institute, Series E: Applied Sciences, Vol. 222, (Kluwer, Dordrecht, 1992), p. 305.

2. Copper interconnections and reliability

3. Low Pressure Chemically Vapor Deposited Copper Films for Advanced Device Metallization

4. A novel model of hydrogen plasma assisted chemical vapor deposition of copper

5. Copper metalorganic chemical vapor deposition reactions of hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane and bis (hexafluoroacetylacetonate) Cu(II) adsorbed on titanium nitride

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