Low temperature silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor using disilane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109779
Reference8 articles.
1. Low‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment
2. Low‐temperature selective epitaxial growth of silicon at atmospheric pressure
3. Reducing the Temperature of Conventional Silicon Epitaxy for Selective Poly‐Epi Growth
4. Bistable conditions for low‐temperature silicon epitaxy
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1. Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma;Journal of Physics D: Applied Physics;2001-03-20
2. High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells;Progress in Photovoltaics: Research and Applications;2001
3. Electronic properties of silicon epitaxial layers deposited by ion-assisted deposition at low temperatures;Journal of Applied Physics;2000-09
4. In Situ Phosphorus Doping during Silicon Epitaxy in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor;Journal of The Electrochemical Society;1999-11-01
5. Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic;Journal of The Electrochemical Society;1999-08-01
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