Piezoelectric coefficients of GaN determined by hopping conduction of carriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4966995
Reference33 articles.
1. 6.3-GHz Film Bulk Acoustic Resonator Structures Based on a Gallium Nitride/Silicon Thin Membrane
2. Analysis of dual-mode thin film bulk acoustic resonators based on polar c-axis tilted wurtzite gallium nitride
3. Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN
4. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
5. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
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1. Elastic constants of GaN grown by the oxide vapor phase epitaxy method;Applied Physics Express;2023-12-26
2. Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon;Applied Physics Express;2022-06-10
3. Role of strain and composition on the piezoelectric and dielectric response of AlxGa1−xN: Implications for power electronics device reliability;Journal of Applied Physics;2021-02-21
4. GHz-range resonant ultrasound spectroscopy for a free-standing nano film studied by picosecond ultrasonics;Applied Physics Express;2019-12-19
5. Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics;Ceramics International;2018-03
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