Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers-Reference-Cited by-同舟云学术

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Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

Published:2013-10-28 Issue:16 Volume:114 Page:164510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Niraula M.,Yasuda K.,Wajima Y.,Yamashita H.,Tsukamoto Y.,Suzuki Y.,Matsumoto M.,Takai N.,Tsukamoto Y.,Agata Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4828479

Reference27 articles.

1. High Energy Resolution Hard X-Ray and Gamma-Ray Imagers Using CdTe Diode Devices

2. CdZnTe Semiconductor Detectors for Spectroscopic X-ray Imaging

3. Evaluation of THM-Grown CdZnTe Material for Large-Volume Gamma-Ray Detector Applications

4. Recent advances in compound semiconductor radiation detectors

5. CdTe and CdZnTe X-ray and gamma-ray detectors for imaging systems

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZnTe layers onR- andS-plane sapphire substrates;physica status solidi (c);2016-02-09

2. Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p +-Si Substrates by MOVPE;Journal of Electronic Materials;2014-04-18

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