Positive temperature coefficient resistor behavior in praseodymium-doped ZnO (0001¯)∣(0001¯) boundaries
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3432444
Reference18 articles.
1. Polarity engineering in polycrystalline ZnO by inversion boundaries
2. Grain boundary dependency of nonlinear current–voltage characteristics in Pr and Co Doped ZnO Bicrystals
3. Dopant-segregation-controlled ZnO single-grain-boundary varistors
4. Atomic Structures and Electrical Properties of ZnO Grain Boundaries
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of praseodymium substitution on electrical properties of CaCu3Ti4O12 ceramics;Ceramics International;2014-01
2. A physicochemical mechanism of chemical gas sensors using an AC analysis;Physical Chemistry Chemical Physics;2013
3. PTC Behavior and Microstructure of Zn-Ni-Ti-O Ceramics;Advanced Materials Research;2010-10
4. Erratum: “Positive temperature coefficient resistor behavior in praseodymium-doped ZnO (0001¯)∣(0001¯) boundaries” [Appl. Phys. Lett. 96, 202104 (2010)];Applied Physics Letters;2010-06-14
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