Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2-Reference-Cited by-同舟云学术

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Published:2020-05-01 Issue:5 Volume:10 Page:055307
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Cornuelle Evan M.¹^ORCID,Growden Tyler A.²^ORCID,Storm David F.³^ORCID,Brown Elliott R.⁴,Zhang Weidong⁴,Downey Brian P.³,Gokhale Vikrant²^ORCID,Ruppalt Laura B.³,Champlain James G.³,Peri Prudhvi⁵^ORCID,McCartney Martha R.⁵,Smith David J.⁵,Meyer David J.³,Berger Paul R.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. NAS-NRC Postdoctoral Research Fellow Residing at the U.S. Naval Research Laboratory, Washington, District of Columbia 20375, USA

3. U.S. Naval Research Laboratory, Washington, District of Columbia 20375, USA

4. Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435, USA

5. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

Funder

National Science Foundation

Office of Naval Research

Publisher

AIP Publishing

Subject