Epitaxial growth of (011) Al on (100) Si by vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107660
Reference14 articles.
1. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam
2. Observation of a new Al(111)/Si(111) orientational epitaxy
3. Atomic structure of the epitaxial Al–Si interface
4. Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition
5. Epitaxial growth of Al(100) on Si(100) by gas‐temperature‐controlled chemical vapor deposition
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