Free‐standing thin film Ge single crystals grown by plasma‐enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333401
Reference5 articles.
1. Calculated and measured efficiencies of thin‐film shallow‐homojunction GaAs solar cells on Ge substrates
2. Molecular beam epitaxial GaAs heteroface solar cell grown on Ge
3. Vaporization kinetics of sodium chloride. I. Solid
4. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique
5. The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers
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1. Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C;EPJ Photovoltaics;2012
2. Hydrogen in wide bandgap semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
3. Hydrogen in Wide Bandgap Semiconductors;Processing of Wide Band Gap Semiconductors;2000
4. Fabrication and characterization of thin, self‐supporting germanium single crystals;Journal of Applied Physics;1993-03
5. Hydrogen Incorporation in Crystalline Semiconductors;Hydrogen in Crystalline Semiconductors;1992
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