Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4794844
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1. The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes;Journal of Applied Physics;2024-01-23
2. Ablation threshold of GaN films for ultrashort laser pulses and the role of threading dislocations as damage precursors;Optics Express;2022-12-15
3. Laser Lift-Off (LLO) Process for Micro-LED Fabrication;Series in Display Science and Technology;2021
4. Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes;Applied Physics A;2018-02-17
5. Mesa Separation of GaInP Solar Cells by Picosecond Laser Ablation;IEEE Journal of Photovoltaics;2017-01
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