Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering-Reference-Cited by-同舟云学术

Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

Published:2017-12 Issue:12 Volume:7 Page:125105
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Al-Mansoori Muntaser¹,Al-Shaibani Sahar¹,Al-Jaeedi Ahlam¹,Lee Jisung²,Choi Daniel²,Hasoon Falah S.¹

Affiliation:

1. National Energy and Water Research Center (NEWRC), P.O. Box 54111, Abu Dhabi, United Arab Emirates

2. Department of Mechanical and Materials Engineering, Masdar Institute of Science and Technology as a Part of Khalifa University of Science and Technology, P.O. Box 127788, Abu Dhabi, United Arab Emirates

Funder

Abu Dhabi Water and Electricity Authority

Masdar Institute of Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5001883

Reference23 articles.

1. Physical Properties of SnO2 Materials: I . Preparation and Defect Structure

2. Effect of Argon-Oxygen Flow Rate Ratio in Magnetron Sputtering on Morphology and Hygroscopic Property of SnO2 Thin Film

3. Nanostructural characterisation of SnO2 thin films prepared by reactive r.f. magnetron sputtering of tin

4. Effect of Argon Gas Flow Rate on the Optical and Mechanical Properties of Sputtered Tungsten Thin Film Coatings

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