Quadratic electro‐optic (Kerr) effects in zincblende‐type semiconductors: Key properties of InGaAsP relevant to device design
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334105
Reference11 articles.
1. Electro‐optical light modulation in InGaAsP/InP double heterostructure diodes
2. Dispersion of the linear electrooptic coefficient in ZnS
3. Linear Electro-Optic Effect and Refractive Indices of Cubic ZnTe*
4. Measurements of the Linear Electrooptic Coefficients and Analysis of the Nonlinear Susceptibilities in Cubic GaAs and Hexagonal CdS
5. Linear electro‐optic effects in zincblende‐type semiconductors: Key properties of InGaAsP relevant to device design
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3. Determination of quadratic electro-optic (Kerr) coefficients of InP:Fe at 1064 nm by photorefractive two-wave mixing;Optics Communications;1996-02
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5. MODELING FOR OPTOELECTRONIC INTEGRATED CIRCUITS;Integrated Optoelectronics;1995
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