Evaluation of defects in InP and InGaAsP by transmission cathodoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326760
Reference7 articles.
1. The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting Diodes
2. Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy
3. Electrical Properties of Copper Segregates in Silicon P-N Junctions
4. Dislocation Etch Pits in Single Crystal GaAs
5. Transmission cathodoluminescence: A new SEM technique to study defects in bulk semiconductor samples
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1. Structural Perfection of Four-Layer GaxIn1 – xAsyP1 – yLaser Heterostructures;Inorganic Materials;2003-12
2. Cathodoluminescence from defects in electron-irradiated InP;Materials Science and Engineering: B;1994-05
3. Panchromatic cathodoluminescence characterization of III-V lattice-mismatched heterostructures;Scanning;1993
4. Cathodoluminescence Scanning Microscopy;Physica Status Solidi (a);1992-10-16
5. Investigation of surface and sub-surface defects on polished InP substrates using auger electron spectroscopy coupled to argon ion sputtering;Applied Surface Science;1991-06
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