Nanoscale mapping of carrier recombination in GaAs/AlGaAs core-multishell nanowires by cathodoluminescence imaging in a scanning transmission electron microscope
Author:
Affiliation:
1. Institute of Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany
2. Walter Schottky Institute and Physics Department, Technical University of Munich, 85748 Garching, Germany
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5131704
Reference38 articles.
1. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes
2. GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si
3. Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
4. Optically pumped room-temperature GaAs nanowire lasers
5. Vertical high-mobility wrap-gated InAs nanowire transistor
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1. Sequential plan-view imaging of sub-surface structures in the transmission electron microscope;Materialia;2020-08
2. Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires;Nanotechnology;2020-07-22
3. Outermost AlGaO x native oxide as a protection layer for GaAs/AlGaAs core-multishell nanowires;Applied Physics Express;2020-06-09
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