Stability of HF-etched Si(100) surfaces in oxygen ambient
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1425461
Reference14 articles.
1. Ideal hydrogen termination of the Si (111) surface
2. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
3. Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
4. Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
5. Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
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