Device simulations of perovskite transistors containing mobile ions and their relevance to experimental data

Abstract

We present a device simulation of lead-halide perovskite-based thin film transistors (TFTs) containing mobile charged species to provide physical reasoning for the various experimental reports. We study the output characteristics for a range of scan duration (1/speed), average mobile ion densities, and N- and P-channel TFTs. We then directly compare our results to published data by Zeidell et al. [Adv. Electron. Mater. 4(12), 1800316 (2018)] and show that if the transistor’s measurement procedure is such that the ions’ effects are apparent, and then, our model can resolve the sign of the mobile ions in their MAPbI3−xClx TFTs (cations) and provide a good estimate of their density (∼1017 cm−3 at 200 k). Interestingly, we find that effects previously associated with channel screening are due to the ion-blocking of the charge extraction and that the incomplete saturation often reported is due to ion-induced channel shortening. Utilizing the same perovskite materials as in solar cells would allow researchers to improve their understanding of the mechanisms governing solar photovoltaics and improve their performance.