Diffusion in Silicon. III. Generation of Excess Vacancies at Climbing Diffusion‐Induced Dislocations, and Dislocation‐Enhanced Diffusion in (001) Crystals-Reference-Cited by-同舟云学术

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Diffusion in Silicon. III. Generation of Excess Vacancies at Climbing Diffusion‐Induced Dislocations, and Dislocation‐Enhanced Diffusion in (001) Crystals

Published:1968-03 Issue:4 Volume:39 Page:2043-2047
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Parker T. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1656486

Reference28 articles.

1. Generation and Distribution of Dislocations by Solute Diffusion

2. Slip Patterns on Boron‐Doped Silicon Surfaces

3. DIFFUSION‐INDUCED DISLOCATION NETWORKS IN Si

4. Diffusion-Induced Stress and Lattice Disorders in Silicon

5. Conditions for the Generation of Slip by Diffusion of Phosphorus into Silicon

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double-Diffusion Processes in Silicon;Impurity Doping Processes in Silicon;1981

2. Atomic diffusion in semiconductors;Reports on Progress in Physics;1978-10-01

3. Interactions between sequential dopant diffusions in silicon-a review;Journal of Physics D: Applied Physics;1977-03-11

4. Diffusion in Silicon and Germanium;Atomic Diffusion in Semiconductors;1973

5. General Features of Diffusion in Semiconductors;Atomic Diffusion in Semiconductors;1973

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