Oxygen-vacancy-related relaxation and conduction behavior in (Pb1-xBax)(Zr0.95Ti0.05)O3 ceramics-Reference-Cited by-同舟云学术

Oxygen-vacancy-related relaxation and conduction behavior in (Pb1-xBax)(Zr0.95Ti0.05)O3 ceramics

Published:2014-10 Issue:10 Volume:4 Page:107141
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhang Tian-Fu¹,Tang Xin-Gui¹,Liu Qiu-Xiang¹,Lu Sheng-Guo²,Jiang Yan-Ping¹,Huang Xian-Xiong¹,Zhou Qi-Fa³

Affiliation:

1. School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Centre, Guangzhou 510006, P. R. China

2. School of Materials and Energy, Guangdong University of Technology, Guangzhou Higher Education Mega Centre, Guangzhou 510006, P. R. China

3. NIH Transducer Resource Center and Department of Biomedical Engineering, University of Southern California, USA

Funder

Guangdong Provincial Educational Commission of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/10/1.4900610.pdf?itemId=/content/aip/journal/adva/4/10/10.1063/1.4900610&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference50 articles.

1. Ferroelectric Memories

2. Dielectric Properties of Lead Zirconate

3. Ferroelectricity and Antiferroelectricity in Ceramic PbZrO3Containing Ba or Sr

4. Origin of the High Piezoelectric Response inPbZr1−xTixO3

5. Domain wall motion and its contribution to the dielectric and piezoelectric properties of lead zirconate titanate films

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