Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120658
Reference9 articles.
1. New features of the temperature dependence of photoconductivity in plasma‐deposited hydrogenated amorphous silicon alloys
2. The sign of photocarriers and thermal quenching of photoconductivity in a-SiH
3. On thermal quenching of the photoconductivity in hydrogenated amorphous silicon
4. Atomic hydrogen improves the rigidity of Si-network and tail states at the valence band in a-Si:H and a-Si:H(F) films
5. Effect of the Local Disorder in a-Si on the Electronic Density of States at the Band Edges.
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