Influence of the silicon nanocrystal size on the 1.54 μm luminescence of Er-doped SiO/SiO2 multilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3057386
Reference16 articles.
1. Erbium implanted thin film photonic materials
2. Excitation and nonradiative deexcitation processes ofEr3+in crystalline Si
3. Room‐temperature electroluminescence from Er‐doped crystalline Si
4. Strong exciton-erbium coupling in Si nanocrystal-doped SiO2
5. Er3+ ions–Si nanocrystals interactions and their effects on the luminescence properties
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1. Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots;Nanomaterials;2023-01-09
2. Photoluminescence properties of Nd-doped silicon oxide thin films containing silicon nanoparticles;Journal of Luminescence;2014-06
3. Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation;Applied Physics Letters;2010-11-29
4. Erbium diffusion in silicon dioxide;Applied Physics Letters;2010-10-04
5. Effect of the plasma composition on the structural and electronic properties of as-grown SiOx/Si heterolayers deposited by reactive sputtering;Semiconductor Science and Technology;2009-09-25
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