The process and efficiency of ultraviolet generation from gallium nitride blue light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119901
Reference5 articles.
1. Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double‐heterostructure blue‐light‐emitting diode
2. Time‐resolved‐spectrum studies of GaN light emitting diodes
3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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1. Bandgap engineering in MBE grown Al1−xGaxN epitaxial columnar nanostructures;Journal of Physics D: Applied Physics;2011-12-12
2. PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12
3. Organic, polymer, and organic/inorganic hybrid light-emitting devices based on phosphorescent fluorinated platinum(II) porphyrin;SPIE Proceedings;2004-11-10
4. Elementary blue-emission bands in the luminescence spectrum of undoped gallium nitride films;Semiconductors;2004-09
5. Semiconductor photoelectric converters for the ultraviolet region of the spectrum;Semiconductors;2003-09
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