Advantages of flattened electrode in bottom contact single-walled carbon nanotube field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893748
Reference23 articles.
1. Helical microtubules of graphitic carbon
2. Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes
3. Extraordinary Mobility in Semiconducting Carbon Nanotubes
4. Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors
5. Single-walled carbon nanotube aggregates for solution-processed field effect transistors
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3. Length separation of single-walled carbon nanotubes and its impact on structural and electrical properties of wafer-level fabricated carbon nanotube–field-effect transistors;Nanotechnology;2016-09-23
4. Raman mapping investigation of single-walled carbon nanotube bending in bottom-contact field-effect-transistor devices;Journal of Applied Physics;2016-09-06
5. Inkjet printed carbon nanotubes in short channel field effect transistors: influence of nanotube distortion and gate insulator interface modification;Flexible and Printed Electronics;2016-08-25
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