Electronic structure of Sb ultrathin film on Bi(111) with large lattice mismatch

Author:

Abe Hiroko1ORCID,Iwasawa Daiki1,Imamura Masaki2ORCID,Takahashi Kazutoshi2ORCID,Takayama Akari1ORCID

Affiliation:

1. Department of Physics and Applied Physics, Waseda University 1 , Shinjuku, Tokyo 169-8555, Japan

2. Synchrotron Light Application Center, Saga University 2 , Tosu, Saga 841-0005, Japan

Abstract

Topological phase transitions have been actively investigated to understand the fundamental properties and to develop applications for spintronics. In this study, we focused on Sb ultrathin films that undergo a topological phase transition by lattice strain. In order to fabricate samples with a lattice constant theoretically predicted to be topologically nontrivial, Sb ultrathin films are prepared on a Bi substrate. The surface structure and electronic states of the Sb/Bi heterostructure were confirmed by the low-energy electron diffraction measurement and angle-resolved photoemission spectroscopy. For 2 and 3 BL Sb films, we demonstrated the possibility of creating well-ordered immiscible ultrathin films of Sb on a Bi substrate and observed a “V”-shaped electronic band, which is significantly different from the electronic state of Bi thin films and freestanding Sb ultrathin films. This suggests that the electronic state of the Sb ultrathin film is affected by the Bi substrate. We propose that the “V”-shaped band originates from a topological phase transition due to expanded lattice constants and band hybridization between Bi and Sb. This heterostructure will provide a new platform for investigating the topological phase transitions and applications.

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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