Recombination activity and electrical levels of dislocations in p-type Si∕SiGe structures: Impact of copper contamination and hydrogenation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1812602
Reference30 articles.
1. Defect states associated with dislocations in silicon
2. On the Energy Spectrum of Dislocations in Silicon
3. Electrical properties of dislocations and point defects in plastically deformed silicon
4. Inhomogeneities in plastically deformed silicon single crystals. II. Deep-level transient spectroscopy investigations ofp- andn-doped silicon
5. Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects
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