The role of oxygen in secondary electron contrast in doped semiconductors using low voltage scanning electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3039804
Reference31 articles.
1. Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update
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3. Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
4. Mapping electrically active dopant profiles by field‐emission scanning electron microscopy
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