Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3488013
Reference33 articles.
1. A detailed study of Auger recombination in 1.3 m InGaAsP/InP quantum wells and quantum well wires
2. The case for Auger recombination in In1−xGaxAsyP1−y
3. Band‐to‐band Auger recombination in InGaAsP lasers
4. Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs
5. Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers
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