Near threshold sputtering of Si and SiO2in a Cl2environment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97814
Reference25 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
2. Plasma etching—A discussion of mechanisms
3. Chemical sputtering of fluorinated silicon
4. Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ion
5. Mass and energy distribution of particles sputter etched from Si in a XeF2environment
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