Mechanism of leakage current reduction of tantalum oxide capacitors by postmetallization annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2408645
Reference31 articles.
1. Electrical properties of amorphous tantalum pentoxide thin films on silicon
2. Electrical characterisation of the insulating property of Ta2O5 in AI–Ta2O5–SiO2–Si capacitors by a low-frequency C/V technique
3. Hydrogen annealing effect on the properties of thermal Ta2O5 on Si
4. Electrical characteristics of Ta2O5 based capacitors with different gate electrodes
5. Control of Two Types of Dielectric Relaxation Current for Ta2O5Metal-Insulator-Metal Capacitors
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