X-ray reciprocal space maps and x-ray scattering topographic observation of GaN layer on GaAs (001) in plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2712166
Reference8 articles.
1. Progress and prospects for GaN and the III–V nitride semiconductors
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
4. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
5. Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy
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1. Influence of Sb2 soaking on strained InAs0.8Sb0.2/Al0.2Ga0.8Sb multiple quantum well interfaces;AIP Advances;2021-07-01
2. Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation;Journal of Crystal Growth;2011-05
3. Intrasubband transitions in cubic AlN/GaN superlattices for detectors from near to far infrared;physica status solidi (c);2011-02-01
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