Reliability Improvement By Adopting Ti-barrier Metal For Porous Low-k ILD Structure-Reference-Cited by-同舟云学术

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Reliability Improvement By Adopting Ti-barrier Metal For Porous Low-k ILD Structure

Published:2007 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
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Author:

Sakata A.,Yamashita S.,Omoto S.,Hatano M.,Wada J.,Higashi K.,Yamaguchi H.,Yosho T.,Imamizu K.,Yamada M.,Hasunuma M.,Takahashi S.,Yamada A.,Hasegawa T.,Motoyama K.,Tagami M.,Kitano T.,Kaneko H.,Ogawa Shinichi,Ho Paul S.,Zschech Ehrenfried

Publisher

AIP

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of temperature in titanium chemical mechanical planarization;Japanese Journal of Applied Physics;2015-06-22

2. Control of Resistance by Oxide on the Surface of Cu Interconnects With CuSiN and Ti-based Barrier Metal;IEEE Transactions on Electron Devices;2013-01

3. Impact on Electromigration Performance of Combining CuSiN and Ti-Barrier Metal in Cu Interconnects;IEEE Transactions on Electron Devices;2012-03

4. Diffusion Barriers;Advanced Interconnects for ULSI Technology;2012-02-17

5. Highly Reliable and Low Resistive Cu/Low-k Dual Damascene Interconnects by Using TaTi Barrier Metal;ECS Journal of Solid State Science and Technology;2012

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