Device characterization for amorphous diamond-like carbon–silicon heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368690
Reference6 articles.
1. Amorphous diamondlike carbon‐silicon heterojunction devices formed by ion implantation
2. Amorphous diamond‐Si semiconductor heterojunctions
3. Application of diamond-like layers as gate dielectric in metal/insulator/semiconductor transistor
4. Characterization of heterojunction devices constructed by amorphous diamondlike films on silicon
5. Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes
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2. Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects;Advanced Materials;2015-09-30
3. Photoconductivity and characterization of nitrogen incorporated hydrogenated amorphous carbon thin films;Journal of Applied Physics;2012-12
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5. Enhanced red electroluminescence from a polycrystalline diamond film/Si heterojunction structure;Applied Physics Letters;2007-04-16
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