Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices-Reference-Cited by-同舟云学术

Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices

Published:2010-05-15 Issue:10 Volume:107 Page:104505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Qiao Xianfeng,Chen Jiangshan,Li Xinglin,Ma Dongge

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3428374

Reference39 articles.

1. Highly Efficient Organic Devices Based on Electrically Doped Transport Layers

2. Controlledp-type doping of polycrystalline and amorphous organic layers: Self-consistent description of conductivity and field-effect mobility by a microscopic percolation model

3. Enhanced Hole Injection into Amorphous Hole-Transport Layers of Organic Light-Emitting Diodes Using Controlled p-Type Doping

4. Controllable Molecular Doping and Charge Transport in Solution‐Processed Polymer Semiconducting Layers

5. n-Type Doping of Organic Thin Films Using Cationic Dyes

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